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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6712 Issued Date : 1993.01.13 Revised Date : 2002.05.07 Page No. : 1/4
HTIP122
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP122 is designed for use in general purpose amplifier and lowspeed switching applications.
Absolute Maximum Ratings (Ta=25C)
TO-220
* Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 C Junction Temperature ................................................................................................ +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Tc=25C)................................................................................................. 65 W Total Power Dissipation (Ta=25C)................................................................................................... 2 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage ................................................................................................. 100 V BVCEO Collector to Emitter Voltage .............................................................................................. 100 V BVEBO Emitter to Base Voltage ....................................................................................................... 5 V IC Collector Current (Continuous)...................................................................................................... 5 A IC Collector Current (Peak)................................................................................................................ 8 A
Characteristics (Ta=25C)
Symbol BVCBO *BVCEO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(on) *hFE1 *hFE2 Cob Min. 100 100 1 1 Typ. Max. 200 500 2 2 4 2.5 200 Unit V V uA uA mA V V V K K pF Test Conditions IC=1mA, IE=0 IC=100mA VCB=100V VCE=50V VEB=5V IC=3A, IB=12mA IC=5A, IB=20mA IC=3A, VCE=3V IC=0.5A, VCE=3V IC=3A, VCE=3V VCB=10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Darlington Schematic
C
B
R1
R2
E
HTIP122 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100000
10000 VCE(sat) @ IC=250IB
Spec. No. : HE6712 Issued Date : 1993.01.13 Revised Date : 2002.05.07 Page No. : 2/4
Saturation Voltage & Collector Current
hFE @ VCE=3V
hFE
1000
75 C 125 C
o
o
Saturation Voltage (mV)
10000
1000
25 C
o
100
25 C
o
125 C
o
75 C
o
10 1 10 100 1000 10000
100 100
1000
10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collcetor Current
10000 VCE(sat) @ IC=2000IB 10000
Saturation Voltage & Colltctor Current
Saturation Voltage (mV)
75 C 25 C 1000 125 C
o o
o
Saturation Voltage (mV)
75 C 1000 25 C
o
o
125 C
o
VCE(sat) @ IC=500IB 100 1000 100 100
10000
1000
10000
Collector Current-IC (mA)
Collector Current-IC (mA)
ON Voltage & Collcetor Current
10000 VBE(ON) @ VCE=3V 1000
Capacitance & Reverse-Biased Voltage
25 C 1000 125 C
o
o
Capacitance (pF)
ON Voltage (mV)
75 C
o
100
Cob
100 100
10 1000 10000 0.1 1 10 100
Collector Current-IC (mA)
Reverse-Biased Voltage (V)
HTIP122
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6712 Issued Date : 1993.01.13 Revised Date : 2002.05.07 Page No. : 3/4
Switching Time & Collector Current
10 VCC=30V, IC=250IB1 =-250IB2 10000 100000 PT=1ms
Safe Operating Area
PT=100ms
Switching Times (us).. .
Tstg
Collector Current (mA)
PT=1s 1000
1 Tf Ton
100
10
0.1 1 10
1 1 10 100
Collector Current (A)
Collector-Emitter Forward Voltage (V)
HTIP122
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
A D B E C
Date Code
Spec. No. : HE6712 Issued Date : 1993.01.13 Revised Date : 2002.05.07 Page No. : 4/4
H 122
TIP
Control Code
H I G 4 P M 3 2 1 N K
Style: Pin 1.Base 2.Collector 3.Emitter
O
3-Lead TO-220AB Plastic Package HSMC Package Code: E *: Typical
DIM A B C D E G H
Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398
Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25
DIM I K M N O P
Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248
Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HTIP122
HSMC Product Specification

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